Two significant STT-MRAM advances from Spin Memory, Inc. provide “Retention-as-a-Service” (RaaS), enabling the fully-composable data center.

The first of these two innovative technologies is a Precessional Spin Current™ structure (aka PSC™) that improves writeability of the MTJ stack without the need for a higher, stress-causing, write voltage. The second is an on-chip MRAM management system called the Endurance Engine™, which consists of specially-designed circuitry that simultaneously improves speed, endurance, and retention.

Download the ChannelScience white paper, STT-MRAM in the Fully Composable Data Center, to learn how Spin Memory’s breakthroughs speed the adoption of MRAM in hyperscale data centers, in the cloud, and at the edge. STT-MRAM, utilizing PSC™ and the Endurance Engine™, is the persistent memory of choice for many new applications. It can make designing with MRAM easier and improve the performance of 5G, AI/ML, IoT, and in-storage processing solutions.